GaN Device Engineering Technology Intern, Masters/Ph.D. (Summer 2024)
Global Foundries

About GlobalFoundries

GlobalFoundries (GF) is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world's most inspired technology companies. With a global manufacturing footprint spanning three continents, GF makes possible the technologies and systems that transform industries and give customers the power to shape their markets. For more information, visit www.gf.com.

Internship Program Overview:

Our Interns & Co-ops are our entry-level talent pipeline for GF across the globe. Our goal is to provide students with a meaningful work experience that will equip them with the skills to embark on a career in the fast-paced and growing semiconductor industry after graduation. As an intern at GF, you'll experience one-on-one mentorship, work assignments that prioritize your growth and potential, professional development opportunities, and the chance to network with executives.

Summary of Role:

We are seeking a highly motivated Masters or Ph.D student with experience in GaN device characterization and development to work with our Technology Development team in advancing world class differentiated semiconductor technologies for our 200mm manufacturing fabricator in Essex Junction, Vermont (FAB9). The intern will embed within our project teams of device, test, process, and integration engineers in developing new GaN HEMT devices targeting High Voltage and RF applications.

Essential Responsibilities include:

• Innovate with device, test, and process integration team members in defining, designing, and setting up electrical test structures, associated wafer measurements, and analysis tools to be used in the technology to meet project objectives for electrical performance, reliability, and yield. Focus on GaN HEMT development for HV and/or RF applications
• Collaborate with the various device, process integration, and program management teams in our technology development team to simulate and/or characterize the GaN technology as it is being developed to meet performance, reliability, yield, and cost objectives.
• Collaborate with various Fab9 engineering teams outside of the technology development team, such as testing, failure analysis, unit module process, reliability, manufacturing, modeling and TCAD simulation, to facilitate and achieve program success.
• Support technology development qualification milestones from conception through manufacturing installation. Collaborate with various technical teams to ensure appropriate electrical tests are available for any new devices or concerns. Perform electrical device simulation and characterization, and drive analysis and team to meet best in class device performance. Includes DC/AC and RF test and analysis of discrete electrical devices including GaN HEMTs, capacitor, Diode, and resistor devices.

Other Responsibilities:

• Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.

Required Qualifications:

• Education - Actively pursuing a Masters or Ph. D. in Electrical Engineering or Solid State Physics or related field through an accredited degree program during the time of internship.
• A basic knowledge of modern semiconductor device physics and device characterization, and of semiconductor processing with emphasis on wide band gap materials like the III-N material system
• Experience with GaN HEMT device characterization - power (high voltage >500V) or RF (s-parameter, loadpull, pulsed I-V)
• Experience with GaN device fabrication
• Must have at least an overall 3.0 GPA and be in good academic standing.
• Language Fluency - English (Written & Verbal)
• Ability to work at least 40 hours per week during the internship.

Preferred Qualifications:

• Prior related internship or co-op experience
• Demonstrated prior leadership experience in the workplace, school projects, competitions, etc.
• Project management skills, i.e., the ability to innovate and execute on solutions that matter; the ability to navigate ambiguity.
• Strong written and verbal communication skills
• Strong planning & organizational skills
• Educational experience in modern device physics (FET, BJT, and HEMT devices, bulk and SOI device structures). Including associated electrical test and analysis methods of discrete device structures.
• Research experience in GaN e-mode or d-mode HEMT RF High Frequency or Power High Voltage devices, or Wide Bandgap Device (WBG) devices.
• Fundamental understanding of WBG device physics like dispersion, traps, self-heating, buffer design
• Experience in semiconductor processing in GaN, CMOS, SiGe technologies for RF or Power High Voltage applications.
• GaN-on-Si characterization

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Expected Salary Range
$0.00 - $0.00

The exact Salary will be determined based on qualifications, experience and location.

If you need a reasonable accommodation for any part of the employment process, please contact us by email at usaccommodations@gf.com and let us know the nature of your request and your contact information. Requests for accommodation will be considered on a case-by-case basis. Please note that only inquiries concerning a request for reasonable accommodation will be responded to from this email address.

An offer with GlobalFoundries is conditioned upon the successful completion of pre-employment conditions, as applicable, and subject to applicable laws and regulations.

GlobalFoundries is fully committed to equal opportunity in the workplace and believes that cultural diversity within the company enhances its business potential. GlobalFoundries goal of excellence in business necessitates the attraction and retention of highly qualified people. Artificial barriers and stereotypic biases detract from this objective and may be illegally discriminatory.

All policies and processes which pertain to employees including recruitment, selection, training, utilization, promotion, compensation, benefits, extracurricular programs, and termination are created and implemented without regard to age, ethnicity, ancestry, color, marital status, medical condition, mental or physical disability, national origin, race, religion, political and/or third-party affiliation, sex, sexual orientation, gender identity or expression, veteran status, or any other characteristic or category specified by local, state or federal law

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